Transistors - Bipolar (BJT) -Single & Arrays,PNP - Pre-Biased,200mW
Specification
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 5V
Power - Max 200mW
Frequency - Transition -
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Buying Option 1
1
-
INR 103.7
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 103.7