Transistors - Bipolar (BJT) -Single & Arrays,NPN - Pre-Biased,700mW
Specification
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 800mA
Voltage - Collector Emitter Breakdown (Max) 40V
Vce Saturation (Max) @ Ib, Ic 1.15V @ 8mA, 800mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 500 @ 300mA, 5V
Power - Max 700mW
Frequency - Transition -
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads