Transistors - Bipolar (BJT) -Single & Arrays,1 NPN Pre-Biased, 1 PNP,100mA, 700mA,50V, 40V
Specification
Transistor Type 1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max) 100mA, 700mA
Voltage - Collector Emitter Breakdown (Max) 50V, 40V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA / 310mV @ 100mA, 1A
Current - Collector Cutoff (Max) 1µA, 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 5V / 300 @ 100mA, 5V
Power - Max 600mW
Frequency - Transition 150MHz
Mounting Type Surface Mount
Package / Case SC-74, SOT-457