Transistors - Bipolar (BJT) -Single & Arrays,1 NPN Pre-Biased, 1 NPN,100mA,50V, 65V
Specification
Transistor Type 1 NPN Pre-Biased, 1 NPN
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V, 65V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA / 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V / 200 @ 2mA, 5V
Power - Max 230mW
Frequency - Transition -
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363