Transistors - Bipolar (BJT) -Single & Arrays,NPN,50mA,12V
Specification
Transistor Type NPN
Current - Collector (Ic) (Max) 50mA
Voltage - Collector Emitter Breakdown (Max) 12V
Vce Saturation (Max) @ Ib, Ic 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 3mA, 1V
Power - Max 200mW
Frequency - Transition 2GHz
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads