Transistors - Bipolar (BJT) -Single & Arrays,NPN,10A,60V
Specification
Transistor Type NPN
Current - Collector (Ic) (Max) 10A
Voltage - Collector Emitter Breakdown (Max) 60V
Vce Saturation (Max) @ Ib, Ic 8V @ 3.3A, 10A
Current - Collector Cutoff (Max) 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A, 4V
Power - Max 600mW
Frequency - Transition 2MHz
Mounting Type Through Hole
Package / Case TO-220-3