Transistors - Bipolar (BJT) -Single & Arrays,NPN,100mA,900V
Specification
Transistor Type NPN
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 900V
Vce Saturation (Max) @ Ib, Ic 5V @ 4mA, 20mA
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 5V
Power - Max 6W
Frequency - Transition -
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack