Transistors - Bipolar (BJT) -Single & Arrays,2 NPN - Pre-Biased (Dual),100mA,50V
Specification
Transistor Type 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max) 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V
Power - Max 150mW
Frequency - Transition 250MHz
Mounting Type Surface Mount
Package / Case 6-SMD, Flat Leads