Transistors - Bipolar (BJT) -Single & Arrays,NPN - Pre-Biased,200mW
Specification
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 500mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 47 @ 50mA, 5V
Power - Max 200mW
Frequency - Transition 200MHz
Mounting Type -
Package / Case -
Buying Option 1
1
-
INR 298.9
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 298.9