Transistors - Bipolar (BJT) -Single & Arrays,PNP - Pre-Biased + Diode,200mW
Specification
Transistor Type PNP - Pre-Biased + Diode
Current - Collector (Ic) (Max) 600mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 47 @ 50mA, 5V
Power - Max 200mW
Frequency - Transition 200MHz
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363