Transistors - Bipolar (BJT) -Single & Arrays,NPN - Pre-Biased + Diode,200mW
Specification
Transistor Type NPN - Pre-Biased + Diode
Current - Collector (Ic) (Max) 600mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 50mA, 5V
Power - Max 200mW
Frequency - Transition 200MHz
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Buying Option 1
1
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INR 207.4
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 207.4