Transistors - Bipolar (BJT) -Single & Arrays,NPN,100mA,50V
Specification
Transistor Type NPN
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA, 6V
Power - Max 450mW
Frequency - Transition 60MHz
Mounting Type Surface Mount
Package / Case 3-XFDFN