Transistors - Bipolar (BJT) -Single & Arrays,NPN - Pre-Biased,200mW
Specification
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V
Power - Max 200mW
Frequency - Transition 250MHz
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Buying Option 1
1
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INR 128.1
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 128.1