Transistors - Bipolar (BJT) -Single & Arrays,PNP - Pre-Biased,250mW
Specification
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 200mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 800mV @ 1mA, 40mA
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 2.5mA, 5V
Power - Max 250mW
Frequency - Transition 250MHz
Mounting Type Surface Mount
Package / Case 3-XFDFN
Buying Option 1
1
-
INR 244
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 244