Transistors - Bipolar (BJT) -Single & Arrays,NPN,3A,100V
Specification
Transistor Type NPN
Current - Collector (Ic) (Max) 3A
Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 1.2V @ 600mA, 3A
Current - Collector Cutoff (Max) 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A, 4V
Power - Max 40W
Frequency - Transition -
Mounting Type Through Hole
Package / Case TO-220-3