Transistors - Bipolar (BJT) -Single & Arrays,NPN - Pre-Biased,330mW
Specification
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 500mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 50mA, 5V
Power - Max 330mW
Frequency - Transition 100MHz
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3