Transistors - Bipolar (BJT) -Single & Arrays,NPN,500mA,30V
Specification
Transistor Type NPN
Current - Collector (Ic) (Max) 500mA
Voltage - Collector Emitter Breakdown (Max) 30V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 100mA
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce 130 @ 100mA, 5V
Power - Max 350mW
Frequency - Transition 150MHz
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads