Transistors - Bipolar (BJT) -Single & Arrays,NPN,3A,100V
Specification
Transistor Type NPN
Current - Collector (Ic) (Max) 3A
Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 400mV @ 150mA, 1.5A
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 500mA, 5V
Power - Max 1W
Frequency - Transition 180MHz
Mounting Type Through Hole
Package / Case TO-251-3 Long Leads, IPak, TO-251AB