Transistors - Bipolar (BJT) -Single & Arrays,NPN,200mA,30V
Specification
Transistor Type NPN
Current - Collector (Ic) (Max) 200mA
Voltage - Collector Emitter Breakdown (Max) 30V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 2mA, 1V
Power - Max 625mW
Frequency - Transition 250MHz
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads