RF JFET, N CH, 25V, 60MA, 6-SOT-363; Tra; RF JFET, N CH, 25V, 60MA, 6-SOT-363; Transistor Type:RF JFET; Drain Source Voltage Vds:25V; Continuous Drain Current Id:60mA; Power Dissipation Pd:190mW; RF Transistor Case:SOT-363; No. of Pins:6
Specification
FET Type 2 N-Channel (Dual)
Voltage - Breakdown (V(BR)GSS) 25V
Drain to Source Voltage (Vdss) 25V
Current - Drain (Idss) @ Vds 24mA @ 10V
Current Drain (Id) -
Voltage - Cutoff (VGS off) @ Id 2V @ 1µA
Power - Max 190mW
Input Capacitance (Ciss) @ Vds 5pF @ 10V
Resistance - RDS(On) 50 Ohm
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363