RF JFET, N CH, 30V, 35MA, 3-SOT-23; Drai; RF JFET, N CH, 30V, 35MA, 3-SOT-23; Drain Source Voltage Vds:30V; Continuous Drain Current Id:35mA; Power Dissipation Pd:300mW; RF Transistor Case:SOT-23; No. of Pins:3; Operating Temperature Max:150°C; MSL:-; Package / Case:3-SOT-23
Specification
FET Type P-Channel
Voltage - Breakdown (V(BR)GSS) 30V
Drain to Source Voltage (Vdss) 30V
Current - Drain (Idss) @ Vds 2mA @ 15V
Current Drain (Id) -
Voltage - Cutoff (VGS off) @ Id 1V @ 10nA
Power - Max 300mW
Input Capacitance (Ciss) @ Vds 8pF @ 10V (VGS)
Resistance - RDS(On) 250 Ohm
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3