PMBFJ113 Series Symmetrical Silicon N-Channel Field-Effect Transistor - SOT-23-3
Specification
FET Type N-Channel
Voltage - Breakdown (V(BR)GSS) 40V
Drain to Source Voltage (Vdss) 40V
Current - Drain (Idss) @ Vds 2mA @ 15V
Current Drain (Id) -
Voltage - Cutoff (VGS off) @ Id 3V @ 1µA
Power - Max 300mW
Input Capacitance (Ciss) @ Vds 6pF @ 10V (VGS)
Resistance - RDS(On) 100 Ohm
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3