RF JFET, N CH, 25V, 10MA, 3-SOT-23; Tran; RF JFET, N CH, 25V, 10MA, 3-SOT-23; Transistor Type:RF JFET; Drain Source Voltage Vds:25V; Continuous Drain Current Id:10mA; Power Dissipation Pd:250mW; RF Transistor Case:SOT-23; No. of Pins:3
Specification
FET Type N-Channel
Voltage - Breakdown (V(BR)GSS) 25V
Drain to Source Voltage (Vdss) 25V
Current - Drain (Idss) @ Vds 10mA @ 15V
Current Drain (Id) -
Voltage - Cutoff (VGS off) @ Id 4V @ 1µA
Power - Max 250mW
Input Capacitance (Ciss) @ Vds 30pF @ 10V (VGS)
Resistance - RDS(On) 18 Ohm
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3