Junction Field Effect Transistors,25V,225mW
Specification
FET Type N-Channel
Voltage - Breakdown (V(BR)GSS) 25V
Drain to Source Voltage (Vdss) 25V
Current - Drain (Idss) @ Vds 24mA @ 10V
Current Drain (Id) -
Voltage - Cutoff (VGS off) @ Id 2.5V @ 1nA
Power - Max 225mW
Input Capacitance (Ciss) @ Vds 5pF @ 10V (VGS)
Resistance - RDS(On) -
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3