Junction Field Effect Transistors,30V,225mW
Specification
FET Type P-Channel
Voltage - Breakdown (V(BR)GSS) 30V
Drain to Source Voltage (Vdss) -
Current - Drain (Idss) @ Vds 7mA @ 15V
Current Drain (Id) -
Voltage - Cutoff (VGS off) @ Id 3V @ 10nA
Power - Max 225mW
Input Capacitance (Ciss) @ Vds 11pF @ 10V (VGS)
Resistance - RDS(On) 125 Ohm
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3