MMBF4392LT1G | ON SEMI | Component Buy

MMBF4392LT1G

ON SEMICONDUCTOR

Junction Field Effect Transistors

TRANSISTOR, JFET, N, 30V, SOT-23; Transistor Type:JFET; Breakdown Voltage Vbr:30V; Zero Gate Voltage Drain Current Idss Min:25mA; Zero Gate Voltage Drain Current Idss Max:75mA; Gate-Source Cutoff Voltage Vgs(off) Max:5V; Power Dissipation Pd:225mW; Transistor Case Style:SOT-23; No. of Pins:3; Operat

Datasheet

Specification

FET Type	N-Channel
Voltage - Breakdown (V(BR)GSS)	30V
Drain to Source Voltage (Vdss)	30V
Current - Drain (Idss) @ Vds	25mA @ 15V
Current Drain (Id)	-
Voltage - Cutoff (VGS off) @ Id	2V @ 10nA
Power - Max	225mW
Input Capacitance (Ciss) @ Vds	14pF @ 15V
Resistance - RDS(On)	60 Ohm
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3

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