Junction Field Effect Transistors,20V,100mW
Specification
FET Type N-Channel
Voltage - Breakdown (V(BR)GSS) 20V
Drain to Source Voltage (Vdss) -
Current - Drain (Idss) @ Vds 100µA @ 5V
Current Drain (Id) 1mA
Voltage - Cutoff (VGS off) @ Id 600mV @ 1µA
Power - Max 100mW
Input Capacitance (Ciss) @ Vds 3.5pF @ 5V
Resistance - RDS(On) -
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Short Body