Junction Field Effect Transistors,35V,300mW
Specification
FET Type N-Channel
Voltage - Breakdown (V(BR)GSS) 35V
Drain to Source Voltage (Vdss) 35V
Current - Drain (Idss) @ Vds 15mA @ 15V
Current Drain (Id) -
Voltage - Cutoff (VGS off) @ Id 6V @ 1nA
Power - Max 300mW
Input Capacitance (Ciss) @ Vds 4pF @ 15V
Resistance - RDS(On) -
Mounting Type Surface Mount
Package / Case 4-SMD, No Lead