Junction Field Effect Transistors,200mW
Specification
FET Type N-Channel
Voltage - Breakdown (V(BR)GSS) -
Drain to Source Voltage (Vdss) 40V
Current - Drain (Idss) @ Vds 5mA @ 10V
Current Drain (Id) 20mA
Voltage - Cutoff (VGS off) @ Id -
Power - Max 200mW
Input Capacitance (Ciss) @ Vds 9pF @ 10V
Resistance - RDS(On) -
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3