Junction Field Effect Transistors,125mW
Specification
FET Type N-Channel
Voltage - Breakdown (V(BR)GSS) -
Drain to Source Voltage (Vdss) 40V
Current - Drain (Idss) @ Vds 60µA @ 10V
Current Drain (Id) 1mA
Voltage - Cutoff (VGS off) @ Id 1.5V @ 1µA
Power - Max 125mW
Input Capacitance (Ciss) @ Vds 1.7pF @ 10V
Resistance - RDS(On) -
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Buying Option 1
1
-
INR 268.4
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 268.4