Junction Field Effect Transistors,30V,200mW
Specification
FET Type N-Channel
Voltage - Breakdown (V(BR)GSS) 30V
Drain to Source Voltage (Vdss) 30V
Current - Drain (Idss) @ Vds 2.5mA @ 10V
Current Drain (Id) 10mA
Voltage - Cutoff (VGS off) @ Id 180mV @ 1µA
Power - Max 200mW
Input Capacitance (Ciss) @ Vds 4pF @ 10V
Resistance - RDS(On) 200 Ohm
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3