Junction Field Effect Transistors,30V,350mW
Specification
FET Type N-Channel
Voltage - Breakdown (V(BR)GSS) 30V
Drain to Source Voltage (Vdss) -
Current - Drain (Idss) @ Vds 50mA @ 20V
Current Drain (Id) -
Voltage - Cutoff (VGS off) @ Id -
Power - Max 350mW
Input Capacitance (Ciss) @ Vds 10pF @ 12V (VGS)
Resistance - RDS(On) 30 Ohm
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)