Junction Field Effect Transistors,25V,300mW
Specification
FET Type N-Channel
Voltage - Breakdown (V(BR)GSS) 25V
Drain to Source Voltage (Vdss) -
Current - Drain (Idss) @ Vds 100mA @ 15V
Current Drain (Id) -
Voltage - Cutoff (VGS off) @ Id 3V @ 3nA
Power - Max 300mW
Input Capacitance (Ciss) @ Vds 30pF @ 0V
Resistance - RDS(On) -
Mounting Type Through Hole
Package / Case TO-206AC, TO-52-3 Metal Can