Specification
FET Type P-Channel
Voltage - Breakdown (V(BR)GSS) 20V
Drain to Source Voltage (Vdss) -
Current - Drain (Idss) @ Vds 300µA @ 10V
Current Drain (Id) -
Voltage - Cutoff (VGS off) @ Id 8V @ 10µA
Power - Max 350mW
Input Capacitance (Ciss) @ Vds 32pF @ 10V
Resistance - RDS(On) -
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads