Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 70V
Current - Continuous Drain (Id) @ 25°C 2.6A (Ta)
Rds On (Max) @ Id, Vgs 160 mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 18nC @ 10V
Input Capacitance (Ciss) @ Vds 635pF @ 40V
Power - Max 2W
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Buying Option 1
1
-
INR 500.2
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 500.2