| FET Type | MOSFET P-Channel, Metal Oxide |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 390 mOhm @ 900mA, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) @ Vgs | 5.9nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 219pF @ 30V |
| Power - Max | 2W |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
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