Specification
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 6.5A
Rds On (Max) @ Id, Vgs 20 mOhm @ 12.6A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 36.8nC @ 10V
Input Capacitance (Ciss) @ Vds 1890pF @ 15V
Power - Max 1.25W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)