Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 1.6A (Ta)
Rds On (Max) @ Id, Vgs 230 mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 9.2nC @ 10V
Input Capacitance (Ciss) @ Vds 497pF @ 50V
Power - Max 1.1W
Mounting Type Surface Mount
Package / Case SOT-23-6