Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 4.2A (Ta)
Rds On (Max) @ Id, Vgs 125 mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 17.16nC @ 10V
Input Capacitance (Ciss) @ Vds 859pF @ 50V
Power - Max 2.11W
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63