Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Rds On (Max) @ Id, Vgs 250 mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) @ Vgs 7.7nC @ 10V
Input Capacitance (Ciss) @ Vds 405pF @ 50V
Power - Max 2W
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA