Specification
FET Type 2 N and 2 P-Channel (H-Bridge)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 800mA, 680mA
Rds On (Max) @ Id, Vgs 700 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 2.9nC @ 10V
Input Capacitance (Ciss) @ Vds 138pF @ 60V
Power - Max 870mW
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)