| FET Type | MOSFET P-Channel, Metal Oxide |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 120mA (Ta) |
| Rds On (Max) @ Id, Vgs | 25 Ohm @ 150mA, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Gate Charge (Qg) @ Vgs | - |
| Input Capacitance (Ciss) @ Vds | 100pF @ 25V |
| Power - Max | 700mW |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
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