Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 450V
Current - Continuous Drain (Id) @ 25°C 75mA (Ta)
Rds On (Max) @ Id, Vgs 150 Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds 120pF @ 25V
Power - Max 2W
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA