Specification
FET Type 4 N-Channel
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 830mA
Rds On (Max) @ Id, Vgs 1.75 Ohm @ 200mA, 5V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds 110pF @ 15V
Power - Max 1.3W
Mounting Type -
Package / Case -