Specification
FET Type 2 P-Channel (Dual)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 1.9A
Rds On (Max) @ Id, Vgs 170 mOhm @ 1.9A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) @ Vgs 4.2nC @ 4.5V
Input Capacitance (Ciss) @ Vds 441pF @ 10V
Power - Max 700mW
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6