Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 5A (Ta)
Rds On (Max) @ Id, Vgs 50 mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Gate Charge (Qg) @ Vgs 3.3nC @ 4V
Input Capacitance (Ciss) @ Vds 270pF @ 10V
Power - Max 200mW
Mounting Type Surface Mount
Package / Case 6-WSOF