Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6A
Rds On (Max) @ Id, Vgs 20 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) @ Vgs 7nC @ 4V
Input Capacitance (Ciss) @ Vds 680pF @ 10V
Power - Max 1W
Mounting Type Surface Mount
Package / Case 8-WFDFN Exposed Pad