Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 15V
Current - Continuous Drain (Id) @ 25°C 2.3A (Ta)
Rds On (Max) @ Id, Vgs 90 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) @ Vgs 11.25nC @ 10V
Input Capacitance (Ciss) @ Vds -
Power - Max 791mW
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)