Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 7.2A (Ta)
Rds On (Max) @ Id, Vgs 18 mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 200µA
Gate Charge (Qg) @ Vgs 33nC @ 5V
Input Capacitance (Ciss) @ Vds 2560pF @ 10V
Power - Max -
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead