Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 33V
Current - Continuous Drain (Id) @ 25°C 21A (Ta)
Rds On (Max) @ Id, Vgs 6.7 mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id 2.3V @ 200µA
Gate Charge (Qg) @ Vgs 27nC @ 10V
Input Capacitance (Ciss) @ Vds 1900pF @ 10V
Power - Max 32W
Mounting Type Surface Mount
Package / Case 8-PowerVDFN